Diffusion Welding SiC Ceramic/Tungsten by SPS
>Spark plasma sintering (SPS) as a diffusion welding method was used to bond SiC ceramic and tungsten which was hoped to be used under high temperature environment. Results show that SiC and tungsten could be bonded by SPS technology at the welding temperature during 1300˚C - 1500˚C. And the interfacial microstructure analysis show that an intermediate layer (including new phases WC, W2C, Si3W5) formed rapidly between SiC and tungsten due to the interface chemical reaction under SPS extra field. Thickness of the intermediate layer was found increasing with the welding temperature and duration increasing because of W diffusion through the intermediate layer. Effect of inter- mediate layer thickness on the welded sample performance is nonlinear. The maximum bending strength of bonded SiC/W was 162 MPa with a welding temperature of 1410˚C and a duration of 5 mins. High temperature processing showed no obvious effects on microstructure and fracture behavior of W metal substrate. It seems that SPS could be a fast and effective diffusion welding technology for ceramic (SiC)-high temperature alloy (W).
文章引用: 张金咏 , 魏倩倩 , 张 帆 , 王玉成 , 傅正义 (2013) SiC陶瓷/金属钨的SPS扩散焊接。 材料科学， 3， 7-10. doi: 10.12677/MS.2013.31002
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