诱导层成膜对弱外延OTFT的影响
The Influence of the Inducement Layer on WEG OTFT

作者: 洪 飞 * , 谭 莉 , 朱棋锋 , 向长江 , 郭晓东 , 申剑锋 :上海中科高等研究院新型显示技术研究中心;

关键词: 有机薄膜晶体管弱外延生长p-6P酞菁化合物
Organic Thin Film Transistor
Weak Epitaxy Growth p-6P Phthalocyanines

摘要:

采用弱外延生长(Weak Epitaxy GrowthWEG)的方法制备OTFTs,研究了不同衬底温度对诱导层p-6P生长形貌的影响,以及WEG-OTFTs器件特性与诱导层形貌的关系。另外,还研究了诱导层p-6P的厚度变化对WEG-OTFTs场效应迁移率的影响。研究发现随着p-6P厚度增加WEG-OTFTs的场效应迁移率是一个先上升后下降然后再上升再下降的过程。我们在诱导层p-6P的厚度2 nm,衬底温度180时得到了最大的OTFTs场效应迁移率1.03 cm2/Vs

Abstract: OTFTs (Organic Thin Film Transistor) were prepared by the method of WEG (Weak Epitaxy Growth). The effection of the growth morphology of p-6P at difference substrate temperature and the relationship between WEG- OTFTs device performance and the morphology of p-6P inducement layer, were investigated. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up continuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then deseased at last. The maximum field effect mobility we obtained was1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180˚C.

文章引用: 洪 飞 , 谭 莉 , 朱棋锋 , 向长江 , 郭晓东 , 申剑锋 (2012) 诱导层成膜对弱外延OTFT的影响。 应用物理, 2, 140-144. doi: 10.12677/APP.2012.24023

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