# 球形GaAs量子点中心类氢杂质基态束缚能的研究The Ground Binding Energy of a Center Hydrogenic Impurity in Spherical GaAs Quantum Dots

Abstract: The ground binding energy of a hydrogenic impurity in spherical GaAs quantum dots is investi-gated by using finite difference method. The electron bound in GaAs quantum dots can be viewed as a confined parabolic potential to the electron due to the parabolicity in the bottom of the conduction band of GaAs material. The results show that the ground binding energy of a hydrogenic impurity in spherical GaAs quantum dots closely depends on the radius of quantum dot and the parabolic potential parameter related to the conduction band. It is easily found that the ground binding energy of a hydrogenic impurity changes considerably with the increasing of the radius of quantum dot from a small radius. As the radius of quantum dot attains a certain value, the change of the radius of quantum dot has little impact on the ground binding energy of a hydrogenic impurity; however, the parabolic potential parameter can considerably change the ground binding energy of a hydrogenic impurity for a large of radius of quantum dot. This is the result of the coupling and competition between the confining widths of the well potential and parabolic potential.

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