Research on High-Performance Passive Optoelectronic Materials and Devices
Abstract: Geared to the urgent needs of strategic high-performance passive optoelectronic materials and devices in the constructions of China’s Internet+, cloud computing data center and super computer, the paper proposes that it needs to take mastering novel Si-based passive optoelectronic materials and devices with independent intellectual property rights as the goal, and take complex multi- function integrated chip technology as the traction, and strive to solve the key technologies, such as the design and fabrication of low-loss cross-cycle large-range wavelength tunable filter and ma- terial, double-effect mutual-coupling enhancement mechanism of SiGe heteroepitaxy material in the electro-optic composite waveguide, electro-optic conversion efficiency and energy consumption of ultral-high-speed modulator, low-temperature deposition technology of top-layer waveguide in multi-function integrated multilayer optical cross connector, design and fabrication of high-effi- ciency coupling and isolation of multilayer optical waveguide, principle, technology and industrialization of Si-based ultral-small low-loss thermal-insensitive passive multiplexer, the integration of grating coupler, filter, and microelectronic device, and the realizations of temperature-control- on-chip and wavelength automatic locking algorithm. Through the technical research, it is expected to make breakthrough in key technologies of a batch of Si-based optoelectronic core chips, provide effective support to the development of information industry and the national security, and serve national strategic requirements of intelligent information technology, advanced semiconductor manufacturing technology, and new generation large-scale integrated circuit.
文章引用: 吴远大 , 王 玥 , 李智勇 , 江 毅 , 黄北举 , 陈 沁 , 张家顺 , 张 磊 (2016) 高性能无源光电子材料与器件研究。 光电子， 6， 126-129. doi: 10.12677/OE.2016.63018
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