Effects of Sputtering Power on Properties of AZO Photoelectric Thin Films
Abstract: Al-doped ZnO (AZO) thin film not only has high electrical conductivity, but also high optical trans-parence in the visible region. AZO has become a kind of important optical-electronic materials. Comparing with ITO thin films, AZO films have abundant resources, low price and low pollution to the environment, so it is hopeful for AZO films to replace the ITO films in the future. In this article, AZO thin films were deposited by using R.F magnetron sputtering method and the AZO target was sintered in our laboratory. The films were characterized by four-point probes, ultraviolet-visible light spectrophotometer, XRD, SEM. The influence of sputtering power on the morphology, electrical and optical properties of AZO films was studied. The results showed that as the sputtering power increases, the crystalline dimension increases, the crystal properties improve, and the electrical conductivity as well as the light transmittance decrease.
文章引用: 罗 帅 , 耿志挺 , 王美英 , 姜 玮 , 屠 节 (2016) 溅射功率对AZO透明导电薄膜的性能影响。 材料科学， 6， 53-58. doi: 10.12677/MS.2016.61007
 李剑光, 叶志镇, 赵炳辉. 氧化锌薄膜研究进展[J]. 材料科学与工程, 1997, 15(2): 65.
 Tominaga, K., et al. (1999) Propertied of Films of Multilayered ZnO: Al and ZnO Deposited by an Alternating Sputtering Method. Thin Solid Films, 343-344, 160-163. http://dx.doi.org/10.1016/S0040-6090(98)01653-8
 王敏, 蒙继龙. 透明导电氧化物薄膜的研究进展[J]. 表面技术, 2003, 32(1): 1-3.