界面对金属诱导硅[111]取向薄膜生长的影响
The Interface Effect on the Growth of Al Induced [111] Oriented Silicon Films

作者: 胡承威 , 夏晓红 , 鲍玉文 , 高 云 :湖北大学材料科学与工程学院,湖北 武汉 ;

关键词: 铝诱导晶化非晶硅界面Al Induced Crystallization (AIC) Amorphous Silicon Interface

摘要:
通过金属铝诱导非晶硅晶化技术,在玻璃衬底上获得了[111]取向生长的多晶硅薄膜。研究了Al诱导Si取向结晶生长所需的退火温度和时间。通过对Al/Si界面层SiO2层厚度的改变,研究了界面SiO2层对取向结晶生长的影响。通过在Al层表面反应沉积Al2O3,研究了表面氧化对薄膜微结构的影响,获得了低表面空洞密度致密Si[111]取向生长薄膜。采用PECVD在铝诱导晶化硅薄膜表面沉积非晶硅层,经快速退火后获得外延[111]取向多晶硅薄膜,可用于多晶硅薄膜电池。

Abstract: In the present work, [111] oriented polycrystalline Si thin films on SiO2 glass substrates have been obtained by the aluminum induced crystallization (AIC) method. The annealing temperatures and time for the Si induced crystallization were optimized experimentally. The effects of the SiO2 layer at the Al/Si interface on the oriented crystallization of the Si layer were investigated, with the re-sults being compared for the different SiO2 thicknesses. By reactive oxidation of the aluminum surface depositing alumina Al2O3, the effect of the surface oxidation on the microstructure of the Si films were further studied. It was found that the resultant dense Si film has a lower void density on the surface. With an amorphous Si layer being deposited on the Al induced crystallized Si film, a polycrystalline Si film with [111] oriented growth was obtained by a rapid thermal annealing, which is applicable for the polycrystalline Si solar cells.

文章引用: 胡承威 , 夏晓红 , 鲍玉文 , 高 云 (2015) 界面对金属诱导硅[111]取向薄膜生长的影响。 材料科学, 5, 46-53. doi: 10.12677/MS.2015.52007

参考文献

[1] Nast, O., Rauscher, S., Jungblut, H., et al. (1998) Micro morphology changes of silicon oxide on Si_111/during current oscillations: A comparative in situ AFM and FTIR study. Journal of Electro analytical Chemistry, 422, 169-174.

[2] Quli, F.A. and Singh, J. (1999) Transmission electron microscopy studies of metal-induced crystallization of amorphous silicon. Materials Science and Engineering, B67, 139-144.

[3] Numata, R., Toko, K., Usami, N. and Suemasu, T. (2014) Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange. Thin Solid Films, 557, 147-150.

[4] Resnik, D., Kovac, J., Godec, M., Vrtacnik, D., Mozek, M. and Amon, S. (2012) The influence of target composition and thermal treatment on sputtered Al thin films on Si and SiO2 substrates. Microelectronic Engineering, 96, 29-35.

[5] Numata, R., Toko, K., Nakazawa, K., Usami, N. and Suemasu, T. (2014) Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer. Thin Solid Films, 557, 143-146.

[6] Prathap, P., Tuzun, O., Madi, D. and Slaoui, A. (2011) Thin film silicon solar cells by AIC on foreign substrates. Solar Energy Materials & Solar Cells, 95, 44-52.

[7] Li, M.H., Liu, Y., Lin, Y.H., et al. (2011) Study on amorphous silicon thin film by aluminum-induced crystallization. Physics Procedia, 18, 77-80.

[8] Kurosawa, M., Kawabata, N., Sadoh, T., et al. (2009) Orientation-controlled Si thin films on insulating substrates by Al-induced crystallization combined with interfacial-oxide layer modulation. Applied Physics Letters, 95, 132103.

[9] Ekanayake, G., Quinn, T. and Reehal, H.S. (2006) Large-grained poly-silicon thin films by aluminium-induced crystallisation of microcrystalline silicon Growth. Journal of Crystal Growth, 293, 351-358.

[10] Jaeger, C., Matsui, T., Takeuchi, M., et al. (2010) Amorphous and Polycrystalline Thin Film Silicon Science and Technology. Japanese Journal of Applied Physics, 49, 112301.

[11] Kuraseko, H., Orita, N., Koaizawa, H., et al. (2009) Inverted Aluminum-Induced Layer Exchange Method for Thin Film Polycrystalline Silicon Solar Cells on Insulating Substrates. Applied Physics Express, 2, 015501.

[12] Widenborg, P., Neuhaus, D.-H., Campbell, P., et al. (2002) Back electrode formation for poly-Si thin film solar cells on glass having AIC-grown seeding Layer. Solar Energy Materials & Solar Cells, 74, 305-314.

[13] Van Gestel, D., Gordon, I. and Poortmans, J. (2011) Metal induced crystallization of amorphous silicon for photovoltaic solar cells. Physics Procedia, 11, 196-199.

[14] Okada, A., Toko, K., Hara, K.O., et al. (2012) Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness. Journal of Crystal Growth, 356, 65-69.

[15] Peng, C.C., Chung, C.K., Wu, B.H., et al. (2011) Effects of annealing conditions and thickness ratio of Si/Al films on the Hall carrier mobility, Al carrier concentration, and nanovoids formed in the metal-induced Si crystallization of Si/Al/Si/ SiO2/glass specimens. Surface & Coatings Technology, 205, 4672-4682.

[16] 金桂, 周继承 (2006) 射频磁控溅射SiO2薄膜的制备与性能研究. 武汉理工大学学报, 8, 12-15.

分享
Top