Study of Interface Stress Property of Gan-Sapphire Hetero-Thick-Film System
Abstract: Based on two hypothesis: a) eliminating the approximate condition that the thickness of film is far less than that of substrate adopted by Stoney model, and considering that the film thickness of GaN is comparable to that of Sapphire substrate; b) taking the GaN film as a film with non-uniform thickness which changes with r, we investigate the curvature and interface shear stress of GaN- Sapphire hetero-thick-film system. In addition, we take the film thickness of GaN as sinusoidal function of r, and study two types of film thickness variation, i.e. the thin-thick-thin model and thick-thin model. The results reveal that the system curvature is not a constant but a variable which changes with r. The interface shear stress shows a behavior of direction transition within the range of R, and transition point just corresponds to the extreme point of curvature, indicating that the curvature has a significant influence on the interface shear stress, which originates from our consideration of the non-uniform film thickness for GaN.
文章引用: 李 佳 , 史俊杰 , 吴洁君 , 刘辉召 , 齐浩然 (2014) GaN-蓝宝石异质厚膜体系界面应力特性研究。 力学研究， 3， 55-64. doi: 10.12677/IJM.2014.34006
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