Properties of Microporous Nanocomposite GaAs by Metal-Assisted Etching Technique
Abstract: This work reports on the photovoltaic properties of n-type microporous GaAs substrates. The microporous morphology on GaAs substrates were fabricated utilizing Ag metal-assisted etching technique under electroless condition. Then, we investigates the surface morphology of microporous GaAs substrates with different etching times.The experimental results indicated the microporous structures of GaAs are larger and clearly defined as increasing etching time. The lower reflectivity of microporous structures was observed in 20 min of etching time. Incident angle near 0 degrees using the reflection spectrum of GaAs polished without etching before the reflectivity curve of reflectance of 50% or less, in the range of 400~800 nm average reflection rate was 33.69%, with 45-degree angle of reflection for incident Spectra, reflectance spectra of GaAs is not polished and near 0° incidence of the specular reflection spectra of spectral structure are less than 50%, 400~800 nm band average reflectance between the rate of 33.56%.
文章引用: 陈正强 , 陈隆建 , 吕思纬 , 蔡文芳 (2011) 利用奈米技术制作砷化镓之微奈米孔洞。 纳米技术， 1， 39-44. doi: 10.12677/nat.2011.11008
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