The Influence of Annealing Temperature on the Properties of MoS2 Nanometer Thin Film
Abstract: Molybdenum disulfide (MoS2) thin films were deposited on Si substrates with MoS2 saturated solution as a raw material carried by argon (Ar) gas by means of chemical vapor deposition. We have analyzed the influence of different annealing temperatures on surface morphology of films, absorption characteristics and electrical properties. We found that MoS2 thin film annealled at 850˚C was characteristic of more smooth and symmetrical as compared to that of the unannealed sample. At the same time, the optical reflectivity apparently reduced, which indicated that annealing can effectively improve photovoltaic effect and photoelectric conversion efficiency, and can be used for fabricating solar cell. In addition, we found that the electrical properties of MoS2 thin films had also been enhanced after annealing. We noted that the conductivity and the carrier mobility were up to 2.848 × 10−4 and 6.42 × 102 cm 2V−1s−1, when annealing at 850˚C, which shows promising potential for low power field effect transistor. Analyzing the influence of different an- nealing temperatures on photoelectric properties of MoS2 nanometer thin films, we demonstrated that the best annealing temperature was 850˚C, which enhanced the applications of MoS2 in the field of photoelectron and information techno- logy.
文章引用: 林 拉 , 陈康烨 , 何 杰 , 张国瑞 , 顾伟霞 , 马锡英 (2013) 退火温度对MoS2纳米薄膜特性影响研究。 纳米技术， 3， 35-39. doi: 10.12677/NAT.2013.33005
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