基于半导体多量子阱中激子能级的EIT全光开关
All-Optical Switching Based on EIT Effects of Semiconductor Multiple Quantum Wells Exciton Levels

作者: 杜鸣笛 , 严 伟 :湖南科技经贸职业学院电子信息工程学院;华中科技大学武汉光电国家实验室;

关键词: 半导体多量子阱电磁诱导透明全光开关Semiconductor Multiple Quantum Wells EIT All-Optical Switching

摘要: 我们报道了一种全新的全光开关,该光开关是在半导体多量子阱中基于激子和双激子能级形成的EIT效应,利用量子相干相消效应来减小材料对探测光场的吸收,且探测光场吸收的强度可以通过控制光场来调节。若将控制光场设置为脉冲光场,则可以实现探测光场的开关调制,通过选取适当的控制光场的强度,可以得到约86%的开关效率。

Abstract:  We report a new all-optical switching. The all-optical switching is based on EIT effect of semiconductor multiple quantum wells exciton energy levels, the use of quantum coherence effects can reduce the absorption of the probe light field, and the intensity of the absorption for the probe light field can be adjusted by the control light field. If the control light field is pulse light field, the all-optical switching can be performed. We can select the appropriate intensity of control light field; the efficiency of switching can reach at almost 86%.

文章引用: 杜鸣笛 , 严 伟 (2013) 基于半导体多量子阱中激子能级的EIT全光开关。 光电子, 3, 29-33. doi: 10.12677/OE.2013.33007

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