应用物理

Vol.3 No.2 (March 2013)

基于弱外延生长的有机薄膜晶体管的研究
The Research of OTFTs Based on Weak Epitaxy Growth

 

作者:

洪 飞 , 谭 莉 , 朱棋锋 :上海中科高等研究院新型显示技术研究中心,上海

向长江 , 郭晓东 , 申剑锋

 

关键词:

有机薄膜晶体管弱外延生长p-6P酞菁化合物 Organic Thin Film Transistor Weak Epitaxy Growth p-6P Phthalocyanines

 

摘要:

采用弱外延生长(Weak Epitaxy Growth, WEG)的方法制备OTFTs,研究了不同衬底温度对诱导层p-6P生长形貌的影响,以及WEG-OTFTs器件特性与诱导层形貌的关系。另外,还研究了诱导层p-6P的厚度变化对WEG-OTFTs场效应迁移率的影响。研究发现随着p-6P厚度增加WEG-OTFTs的场效应迁移率是一个先上升后下降然后再上升再下降的过程。我们在诱导层p-6P的厚度2 nm,衬底温度180度时得到了最大的OTFTs场效应迁移率1.03 cm2/Vs。

OTFTs were prepared by the method of WEG (Weak Epitaxy Growth). The results showed that substrate temperature strongly affected the growth morphology of p-6P inducement layer, and the relationship between WEG- OTFTs device characteristics and the morphology of p-6P inducement layer. Furthermore, OTFTs device performance depending on the thickness of p-6P inducement layer was disclosed. We found that as the p-6P thickness rose up continuously, the WEG-OTFTs mobility increased at first then decreased, and increased again and then decreased at last. The maximum field effect mobility we obtained was 1.03 cm2/Vs at the conditions of p-6P layer thickness of 2 nm and the substrate temperature of 180˚C.






文章引用:

洪 飞 , 谭 莉 , 朱棋锋 , 向长江 , 郭晓东 , 申剑锋 (2013) 基于弱外延生长的有机薄膜晶体管的研究。 应用物理, 3, 50-55. doi: 10.12677/APP.2013.32010

 

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