Vol.2 No.2 (May 2012)
Fabrication and Properties of Ultraviolet Photo-Detector Based on SiC Nanowires
A new type of Ultraviolet Photodetector (UVPDs) based on a bundle of highly aligned SiC nanowires was fabricated and the photo-electric properties of the UVPDs including I-V characteristic and time response et al. were studied in this paper. SiC nanowires were prepared by pyrolysis of a polymer precursor with ferrocene as the catalyst by a CVD route. The diameter of SiC nanowires varied from 100 to 200 nm while they were some centimeters long. A bundle of nanowires was fixed onto two legs in a custom base by conductive silver paste to form the UVPDs. The electrical measurements of the device show a big increase of current when explored the device to 254 nm UV light, and the rise time of the device is very short, but the fall time is relatively long.
于晓燕 , 彭刚 , 李公义 , 何焰蓝 , 周应秋 (2012) SiC纳米线紫外光探测器光电性能的研究。 纳米技术， 2， 19-22. doi: 10.12677/nat.2012.22004
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