应用物理

Vol.5 No.11 (November 2015)

单质铜颗粒掺杂的氧化亚铜复合薄膜制备及物性研究
Fabrication and Physical Properties of Cu2O:Cu Composite Thin Films

 

作者:

王刘勇 :苏州大学物理与光电能源学部,江苏 苏州

 

关键词:

Cu2O:Cu脉冲激光沉积颗粒掺杂Cu2O:Cu PLD Particles Doped

 

摘要:

本文采用脉冲激光沉积法成功制备出,Cu2O:Cu复合薄膜,Cu2O薄膜。结果表明在600℃时易获得纯Cu2O薄膜,当温度升高到700℃时,会有铜单质的出现,并通过X射线衍射(XRD),原子力显微镜(AFM),扫描电子显微镜(SEM),探究了薄膜的生长取向和表面形貌,在STO (001)基底上,Cu2O生长取向为(002),Cu为(022)。同时利用透射电子显微镜测试了薄膜的微结构,但由于Cu颗粒或团簇尺寸太小,并不能直接被观察到。薄膜的光吸收测试表明,这种颗粒掺杂的复合薄膜较纯Cu2O薄膜,在部分波段具有更高的吸收系数。

Pulsed deposition method (PLD) was successfully used in the manufacture of Cu2O and Cu2O:Cu composite thin films. The results showed that we could obtain the pure Cu2O film at 600˚C, and that the elemental copper particles occurred when the temperature rose to 700˚C. In addition, X-ray diffraction, atomic force microscopy and scanning electron microscope were used in the research of growth orientation and surface topography. The orientation between film and substrate is STO(001)//Cu2O(002)//Cu(002). Also the microstructure of the composite film was tested by transmission electron microscopy, but Cu particles or clusters’ size were too small; so we could hardly observe them directly. The absorption coefficient of the particles doped composite film is higher than the pure Cu2O film during some wavelength.

文章引用:

王刘勇 (2015) 单质铜颗粒掺杂的氧化亚铜复合薄膜制备及物性研究。 应用物理, 5, 131-136. doi: 10.12677/APP.2015.511018

 

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