Vol.3 No.4 (November 2013)
Photoluminescence and Raman Scattering Properties of ZnO:Eu3+ Thin Films
ZnO:Eu3+ film shows a strong and sharp red character peak from the 5DO→7F2 transitions in Eu3+ ions, which would be very fit for luminescent material of photoelectric device. A ZnO seed layer is first prepared on a glass substrate by CS-300 DC magnetron sputtering device, and then Eu3+-doped ZnO thin films are assembled on the ZnO seed layer using a simple hydrothermal method. X-ray diffraction (XRD) spectrum, Photoluminescence (PL) spectrum and Raman scattering spectrum are used to characterize the ZnO:Eu3+ thin films at last. The XRD analysis results show that all ZnO:Eu3+ thin films have hexagonal wurtzite structure and along the (002) C-axis preferred orientation growth, beyond that there is no other diffraction peak in the diffraction spectrum, and crystallinity of thin films is decreased after doping with Eu3+. The PL spectrum results show that strong intrinsic ZnO characteristic peak was almost completely suppressed with the excitation of 325 nm ultraviolet photons, and a sharp and intense red characteristic peak located at around 615 nm wavelength in the visible region can be observed from the PL spectras of ZnO:Eu3+ thin film. So Eu3+ successfully substitutes Zn2+ in the ZnO lattice. In the different doping ratio, the highest peak of ZnO: Eu3 + film have some slight deviation. The Raman spectroscopy comparison of before and after doping analysis reveals that after Eu3+ substitutes Zn2+, bonding with O2− or Zn2+, new Raman peaks appear in the Raman spectra.
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