Vol.3 No.3 (August 2013)
The Influence of Annealing Temperature on the Properties of MoS2 Nanometer Thin Film
Molybdenum disulfide (MoS2) thin films were deposited on Si substrates with MoS2 saturated solution as a raw material carried by argon (Ar) gas by means of chemical vapor deposition. We have analyzed the influence of different annealing temperatures on surface morphology of films, absorption characteristics and electrical properties. We found that MoS2 thin film annealled at 850˚C was characteristic of more smooth and symmetrical as compared to that of the unannealed sample. At the same time, the optical reflectivity apparently reduced, which indicated that annealing can effectively improve photovoltaic effect and photoelectric conversion efficiency, and can be used for fabricating solar cell. In addition, we found that the electrical properties of MoS2 thin films had also been enhanced after annealing. We noted that the conductivity and the carrier mobility were up to 2.848 × 10−4 and 6.42 × 102 cm 2V−1s−1, when annealing at 850˚C, which shows promising potential for low power field effect transistor. Analyzing the influence of different an- nealing temperatures on photoelectric properties of MoS2 nanometer thin films, we demonstrated that the best annealing temperature was 850˚C, which enhanced the applications of MoS2 in the field of photoelectron and information techno- logy.
林 拉 , 陈康烨 , 何 杰 , 张国瑞 , 顾伟霞 , 马锡英 (2013) 退火温度对MoS2纳米薄膜特性影响研究。 纳米技术， 3， 35-39. doi: 10.12677/NAT.2013.33005
 Y. Yoon, K. Ganapathi and S. Salahuddin. How good can mo- nolayer MoS2 transistors be? Nano Letters, 2011, 11: 3768-3773.
 B. K. Prasad, S. Rathod, M. S. Yadav, et al. Sliding wear behavior of cast iron: Influence of MoS2 and graphite addition to the oil lubricant. Journal of Materials Engineering and Performance, 2011, 20: 445-455.
 J. N. Coleman, M. Lotya, A. O’Neill, et al. Two-dimensional nanosheets produced by liquid exfoliation of layered materials. Science, 2011, 331: 568-571.
 汤国虎. 纳米二硫化钼的合成与应用现状[J]. 无机盐工业, 2009, 6: 89-93.
 B. Radisavljevic, A. Radenovic, J. Brivio, et al. Single-layer MoS2 transistors. Nature Nanotech, 2011, 6: 147-150.
 G. Eda, H. Yamaguchi, D. Voiry, et al. Correction to photoluminescence from chemically exfoliated MoS2. Nano Letters, 2012, 12(1): 526-526.
 G. Eda, H. Yamaguchi, D. Voiry, et al. Photoluminescence from chemically exfoliated MoS2. Nano Letters, 2011, 11(12): 5111- 5116.
 E. Gourmelon, O. Lignier, H. Hadouda, et al. MS2 (M=W,Mo) photosensitive thin films for solar cells. Solar Energy Materials and Solar Cells, 1997, 46: 115-121.
 S. Alkis, T. Öztaş, L. E. Aygün, et al. Thin film MoS2 nano- crystal based ultraviolet photodetector. Optics Express, 2012, 20(19): 21815-21820.
 王泉山, 兰新哲, 周军, 宋永辉, 邢相栋. 液相化学法合成纳米二硫化钼研究进展[J]. 广东化工, 2007, 9: 32-35.